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Power Transistors
2SC4986
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
7.5±0.2
4.5±0.2
3.8±0.2
s Features
10.8±0.2
q High collector to base voltage VCBO q High collector to emitter VCEO q Allowing automatic insertion with radial taping
2.5±0.1
90° 0.65±0.1 0.85±0.1
1.0±0.1 0.8C
0.8C
0.7±0.1
0.7±0.1
/ s Absolute Maximum Ratings (Ta=25˚C)
e ) Parameter
Symbol
Ratings
Unit
16.0±1.0
c type Collector to base voltage
VCBO
500
V
n d tage. ued Collector to emitter voltage VCEO
400
V
le s ontin Emitter to base voltage
VEBO
7
V
a elifecyc disc Peak collector current
ICP
4
A
n u t ed, Collector current
IC
2
A
roduc d typ Collector power dissipation PC
1.
2SC4986 Datasheet
