ME95N10T-G - N-Channel MOSFET

Matsuki

Download the ME95N10T-G datasheet PDF. This datasheet also covers the ME95N10T variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME95N10T is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

Key Features

RDS(ON)≦8.5mΩ@VGS=10V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability PIN.

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ME95N10T-G n-channel mosfet by Matsuki - Datasheet Preview — Note: The manufacturer provides a single datasheet file (ME95N10T-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	ME95N10T-G
Manufacturer	Matsuki
File Size	901.02 KB
Description	N-Channel MOSFET
Datasheet	ME95N10T-G Datasheet

Other Datasheets by Matsuki

Part Number	Description
ME95N10T	N-Channel MOSFET
ME95N10F	N-Channel MOSFET
ME95N10F-G	N-Channel MOSFET
ME95N03	N-Channel MOSFET
ME95N03-G	N-Channel MOSFET
ME95N03T	N-Channel MOSFET
ME95N03T-G	N-Channel MOSFET
ME95N04	N-Channel MOSFET
ME95N04-G	N-Channel MOSFET
ME95P03	P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

N-Channel 100-V (D-S) MOSFET ME95N10T/ME95N10T-G GENERAL DESCRIPTION The ME95N10T is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. FEATURES ● RDS(ON)≦8.