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ME6982ED-G - Dual N-Channel MOSFET

Download the ME6982ED-G datasheet PDF. This datasheet also covers the ME6982ED variant, as both devices belong to the same dual n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME6982ED Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦19mΩ@VGS=4.5V.
  • RDS(ON)≦24mΩ@VGS=2.5V.
  • RDS(ON)≦39mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME6982ED-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME6982ED-G
Manufacturer Matsuki
File Size 1.04 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet ME6982ED-G Datasheet

Other Datasheets by Matsuki

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ME6982ED Dual N-Channel MOSFET
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ME6970 Dual N-Channel MOSFET
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ME6970D-G Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ME6982ED/ME6982ED-G Dual N-Channel 20V(D-S) Enhancement Mode Mosfet GENERAL DESCRIPTION The ME6982ED Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TSSOP-8) Top View FEATURES ● RDS(ON)≦19mΩ@VGS=4.5V ● RDS(ON)≦24mΩ@VGS=2.5V ● RDS(ON)≦39mΩ@VGS=1.