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SLU840UZ - N-Channel MOSFET

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 6.5A, 500V, RDS(on) typ. = 0.8Ω@VGS = 10V - Low gate charge ( typical 15.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter SLD840UZ / SLU840UZ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1.

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Datasheet Details

Part number SLU840UZ
Manufacturer Maple Semiconductor
File Size 0.96 MB
Description N-Channel MOSFET
Datasheet download datasheet SLU840UZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SLD840UZ / SLU840UZ SLD840UZ / SLU840UZ 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 6.5A, 500V, RDS(on) typ. = 0.8Ω@VGS = 10V - Low gate charge ( typical 15.
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