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SLS30L03T - N And P-Channel Enhancement Mode MOSFET

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripeTRENCH technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - N-Channel: 30V 6A RDS(on)Typ= 18.6mΩ@VGS = 10 V RDS(on))Typ= 30mΩ@VGS = 4..5V - P-Channel: -30V- 6A RDS(on))Typ= 27mΩ@VGS = 10 V RDS(on))Typ= 42mΩ@VGS = 4..5V - Very Low On-resistance RDS(ON) - LowCrss ( typical 5.7pF) - Fast switching - 100% avalanche tested - Improved dv/dt capability SOP-8 P-Channel N-Channel Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS PD R θJA TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - C.

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Datasheet Details

Part number SLS30L03T
Manufacturer Maple Semiconductor
File Size 777.29 KB
Description N And P-Channel Enhancement Mode MOSFET
Datasheet download datasheet SLS30L03T Datasheet

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SLS30L03T LEAD FREE Pb RoHS SLS30L03T N And P-Channel Enhancement Mode MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripeTRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency. Features - N-Channel: 30V 6A RDS(on)Typ= 18.6mΩ@VGS = 10 V RDS(on))Typ= 30mΩ@VGS = 4..5V - P-Channel: -30V- 6A RDS(on))Typ= 27mΩ@VGS = 10 V RDS(on))Typ= 42mΩ@VGS = 4..5V - Very Low On-resistance RDS(ON) - LowCrss ( typical 5.
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