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SLF10N80CZ - N-Channel MOSFET

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 10A, 800V, RDS(on)Typ. = 0.85Ω@VGS = 10 V - Low gate charge ( typical 63 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability - ESD Improved capability D G GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter SLP10N80CZ SLF10N80CZ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100.

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Datasheet Details

Part number SLF10N80CZ
Manufacturer Maple Semiconductor
File Size 397.39 KB
Description N-Channel MOSFET
Datasheet download datasheet SLF10N80CZ Datasheet

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Full PDF Text Transcription

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SLP10N80CZ / SLF10N80CZ SLP10N80CZ / SLF10N80CZ 800V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 10A, 800V, RDS(on)Typ. = 0.
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