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SLB10N65S - N-Channel MOSFET

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 10A, 650V, RDS(on) typ. =0.8Ω@VGS = 10 V - Low gate charge ( typical 28.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB10N65S SLI10N65S VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note.

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Datasheet Details

Part number SLB10N65S
Manufacturer Maple Semiconductor
File Size 642.35 KB
Description N-Channel MOSFET
Datasheet download datasheet SLB10N65S Datasheet
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SLB10N65S/SLI10N65S SLB10N65S/ SLI10N65S 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 10A, 650V, RDS(on) typ. =0.8Ω@VGS = 10 V - Low gate charge ( typical 28.
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