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MDU1535 - N-Channel MOSFET

General Description

The MDU1535 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU1535 is suitable device for DC/DC Converter and general purpose applications.

Key Features

  •  VDS = 30V  ID = 32A @VGS = 10V  RDS(ON) < 8.0 mΩ @VGS = 10V < 10.5 mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested DD DD DD DD D S SSG GS SS G PDFN56 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC (Silicon Limited) TC=25oC (Package Limited) TA=25oC TA=70oC TC=25oC TA=25oC Symbol VDSS.

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Datasheet Details

Part number MDU1535
Manufacturer MagnaChip
File Size 0.99 MB
Description N-Channel MOSFET
Datasheet download datasheet MDU1535 Datasheet

Full PDF Text Transcription (Reference)

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MDU1535 – Single N-Channel Trench MOSFET 30V MDU1535 Single N-channel Trench MOSFET 30V General Description The MDU1535 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1535 is suitable device for DC/DC Converter and general purpose applications. Features  VDS = 30V  ID = 32A @VGS = 10V  RDS(ON) < 8.0 mΩ @VGS = 10V < 10.5 mΩ @VGS = 4.