The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MDS5651– Dual N-Channel Trench MOSFET 30V, 7.5A, 26mΩ
MDS5651
Dual N-Channel Trench MOSFET 30V, 7.5A, 26mΩ
General Description
The MDS5651 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in on-state resistance, switching performance and reliability
Low RDS(ON), low gate charge can be offering superior benefit in the application.
Features
VDS = 30V ID = 7.5A @VGS = 10V RDS(ON) < 26mΩ @VGS = 10V < 39mΩ @VGS = 4.
MDS5651 Datasheet
