Datasheet Details
| Part number | MDS1101 |
|---|---|
| Manufacturer | MagnaChip |
| File Size | 1.03 MB |
| Description | N-Channel MOSFET |
| Datasheet |
 MDS1101 Datasheet
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General Description
The MDS1101 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDS1101 is suitable device for DC/DC Converter and general purpose applications.
Key Features
- VDS = 12V ID = 15A @VGS = 4.5V RDS(ON) < 8.0 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) G 8 Leads, SOIC D S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range TA=25oC TA=70oC TA=25oC TA=70oC Thermal Characteristics Characteristics Thermal Resistance,.