Datasheet4U Logo Datasheet4U.com

MDI1N60S - N-Channel Trench MOSFET

General Description

The MDI1N60S uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality.

MDI1N60S is suitable device for SMPS, compact ballast, battery charger and general purpose applications.

Key Features

  • VDS = 600V ID = 1.0A RDS(ON) ≤ 8.5Ω @VGS = 10V @VGS = 10V.

📥 Download Datasheet

Datasheet Details

Part number MDI1N60S
Manufacturer MagnaChip
File Size 761.49 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDI1N60S Datasheet

Other Datasheets by MagnaChip

Part Number Description
MDI1752 N-Channel Trench MOSFET
MDI2N60 N-Channel Trench MOSFET
MDI4N60 N-Channel MOSFET
MDI4N60B N-Channel Trench MOSFET
MDI5N40 N-Channel MOSFET
MDI6N60B N-Channel Trench MOSFET
MDI6N65B N-Channel MOSFET
MDIB6N70C N-Channel Trench MOSFET
MDIS1501 N-Channel Trench MOSFET
MDIS1502 N-Channel Trench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MDI1N60S N-channel MOSFET 600V MDI1N60S N-Channel MOSFET 600V, 1.0A, 8.5Ω General Description The MDI1N60S uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality. MDI1N60S is suitable device for SMPS, compact ballast, battery charger and general purpose applications. Features VDS = 600V ID = 1.0A RDS(ON) ≤ 8.