MT82P50N3
Features
Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. Ro HS pliant.
$SSOLFDWLRQV
Notebook puter Portable Battery Pack
Absolute Maximum Ratings (TA = 25 unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range
Symbol VDS VGS ID IDM PD
TJ,TSTG
DFN3X3-8L
Limit
-20 ±12 -50 -150 2.6 -55 To 150
Unit
V V A A W ć
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RșJA
ć/W
Package Marking and Ordering Information
Device Marking MT82P50N3
Device MT82P50N3
Device Package DFN3X3-8L
Reel Size 7"
Tape width 8mm
Quantity 3000 units
ZZZPWVHPLFRP
Electrical Characteristics (TA=25ćunless otherwise noted)
Parameter
Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body...
