MT81P03
Features
Advanced Trench Process Technology.
High Density Cell Design for Ultra Low
On-Resistance.
Lead free product is acquired.
Ro HS pliant.
$SSOLFDWLRQV
Notebook puter Portable Battery Pack
Absolute Maximum Ratings (TA = 25 unless otherwise noted)
Symbol
VDS VGS ID IDM IS PD
TJ, Tstg
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) 1 Maximum Power Dissipation 1 Operating Junction and Storage Temperature Range
S TO-252-2L
10s
Steady State
-30
±20
-80
-220
-2.7
-1.36
-55 to 150
Units
V V A A A W
Thermal Resistance Ratings
Symbol
Parameter
Rth JA
Maximum Junction-to-Ambient 1
Rth JF Notes:
Maximum Junction-to-Foot (Drain)
1. Surface Mounted on 1” x 1” FR4 Board. t 10 Sec Steady State Steady State
Typical
33 70...
