MT8103
Features
Advanced trench process technology +LJKGHQVLWFHOOGHVLJQIRUXOWUDORZRQUHVLVWDQFH /HDGIUHHSURGXFWLVDFTXLUHG Ro HS pliant
Applications
DD D D
Notebook puter Portable battery backs
G SS S SO-8
Absolute Maximum Ratings(TA = 25 unless otherwise noted)
Symbol
VDS VGS ID IDM IS PD
TJ, Tstg
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Maximum Power Dissipation 1 Operating Junction and Storage Temperature Range
10s
Steady State
-30
±20
-13
-9
-50
-2.7
-1.36
-55 to 150
Units
V V A A A W
Thermal Resistance Ratings
Symbol
Parameter
Rth JA
Maximum Junction-to-Ambient 1
Notes: 1 Surface M ounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. t 10 Sec Steady...
