• Part: MT8102
  • Description: P-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: MT Semiconductor
  • Size: 898.29 KB
Download MT8102 Datasheet PDF
MT Semiconductor
MT8102
Features ‡ R DS(on) = 6.0m: ( Max.)@ VGS = -10V, I D = -20A ‡ R DS(on) = 9.7m:( Max.)@ VGS = -4.5V, I D = -15A ‡ Extended VGS range (-25V) for battery applications ‡ +LJKSHUIRUPDQFHWUHQFKWHFKQRORJIRUH[WUHPHOORZ R '621 ‡ +LJKSRZHUDQGFXUUHQWKDQGOLQJFDSDELOLW ‡ Ro HS pliant Absolute Maximum Ratings(TA = 25 unless otherwise noted) DD D D SG SS SO-8 Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation for Single Operation TJ, TSTG Operating and Storage Temperature (Note 1a) (Note 1a) (Note 1b) (Note 1c) Thermal Characteristics RTJA RTJC Thermal Resistance , Junction to Ambient (Note 1a) Thermal Resistance , Junction to Case (Note 1) Ratings -30 ±20 -20 -69 3.8 1.5 1.2 -55 to +150 Units V V A °C °C/W °C/W ZZZPWVHPLFRP Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test...