MT2302 Datasheet | MT Semiconductor

Features ‡ Super high dense cell design for low RDS(ON) ‡ Rugged and reliable ‡ Simple drive requirement ‡ SOT-23 package $SSOLFDWLRQV ‡ Notebook puter ‡Portable Battery Pack ABSOLUTE MAXIMUM RATINGS˄TA=25ć unless otherwise noted˅ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous嘌@Tj=125ć Symbol VDS VGS ID Limit Unit ±12 - Pulse d b Drain-source Diode Forward Current嘌 Maximum Power Dissipation嘌 Operating Junction and Storage Temperature Range IS PD TJ,TSTG -55 to 150 ć THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambient嘌 Rth JA ć/W ZZZPWVHPLFRP ELECTRICAL CHARACTERISTICS (TA=25ć unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERITICS Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance...