• Part: MT10G10
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: MT Semiconductor
  • Size: 2.13 MB
Download MT10G10 Datasheet PDF
MT Semiconductor
MT10G10
1&KDQQHO(QKDQFHPHQW0R GH)LHOG (IIHFW7UDQVLVWRU Product Summary ‡ VDS = 100V ‡ I D =15A (V GS= 10V) ‡ R DS(ON) < 13 m @VGS =10V The MT10G10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. ‡ Excellent gate charge x RDS(on) product(FOM) ‡ Very low on-resistance RDS(on) ‡ Pb-free lead plating Application ‡ DC/DC Converter ‡ Ideal for high-frequency switching and synchronous rectification Package Marking and Ordering Information Device Marking Device Device Package SO-8 Reel Size 330mm Tape width 120mm Quantity 2500 units Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source...