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MP18021HN - 100V High Frequency Half-Bridge Gate Driver

Download the MP18021HN datasheet PDF. This datasheet also covers the MP18021 variant, as both devices belong to the same 100v high frequency half-bridge gate driver family and are provided as variant models within a single manufacturer datasheet.

General Description

The MP18021 is a high frequency, 100V half bridge N-channel power MOSFET driver.

Its low side and high side driver channels are independently controlled and matched with less than 5ns in time delay.

Key Features

  • Drives N-channel MOSFET half bridge.
  • 100V VBST voltage range.
  • On-chip bootstrap diode.
  • Typical 16ns propagation delay time.
  • Less than 5ns gate drive matching.
  • Drive 1nF load with 12ns/9ns rise/fall times with 12V VDD.
  • TTL compatible input.
  • Less than 150A quiescent current.
  • UVLO for both high side and low side.
  • In SOIC8 EPAD and 3×3mm QFN8 Packages.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MP18021-MPS.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by Monolithic Power Systems

Part Number Description
MP18021HQ 100V High Frequency Half-Bridge Gate Driver
MP18021 100V High Frequency Half-Bridge Gate Driver
MP18024 High Frequency Half-Bridge Gate Driver
MP18024HN High Frequency Half-Bridge Gate Driver
MP18851 Independent Dual-Channel Gate Driver
MP100 Offline Inductor-less Regulator
MP100GN Offline Inductor-less Regulator
MP100L Offline Inductor-Less Regulator
MP100LGN Offline Inductor-Less Regulator
MP103 Higher Power Offline Inductor-Less Regulator

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
The Future of Analog IC Technology DESCRIPTION The MP18021 is a high frequency, 100V half bridge N-channel power MOSFET driver. Its low side and high side driver channels are independently controlled and matched with less than 5ns in time delay. Under voltage lock-out on both high side and low side supplies force their outputs low in case of insufficient supply. The integrated bootstrap diode reduces external component count.