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MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.
Features
*Low Switching noise. *High Current Capacity *Guarantee Reverse Avalanche. *Guard-Ring for Stress Protection. *Low Power Loss & High efficiency. *150℃ Operating Junction Temperature *Low Stored Charge Majority Carrier Conduction.