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SYS82000RKXC-70 - 2M x 8 SRAM MODULE

Download the SYS82000RKXC-70 datasheet PDF. This datasheet also covers the SYS82000RKXC-12 variant, as both devices belong to the same 2m x 8 sram module family and are provided as variant models within a single manufacturer datasheet.

General Description

The SYS82000RKXC is a plastic 16Mbit Static RAM Module housed in a standard 38 pin Single InLine package organised as 2M x 8 with access times of 85,100, or 120 ns.

The module is constructed using four 512Kx8 SRAMs in TSOPII packages mounted onto an FR4 epoxy substrate.

Key Features

  • s Access Times of 85/100/120 ns. Low Power Disapation: Operating 600 mW (Max. ) Standby-L Version 1.1 mW (Max. ) 5 Volt Supply ± 10%. Completely Static Operation. Low Voltage VCC Data Retention. On-board Decoding & Decoupling Capacitors. 38 Pin Single-In-Line package (SIP). Upgrade path to SYS84000RKXC (32Mbits).
  • Block Diagram Pin Definition NC A20 Vcc WE D2 D3 D0 A1 A2 A3 A4 GND D5 A10 A11 A5 A13 A14 A19 CS A15 A16 A12 A18 A6 D1 GND A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SYS82000RKXC-12_MOSAIC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SYS82000RKXC-70
Manufacturer MOSAIC
File Size 128.55 KB
Description 2M x 8 SRAM MODULE
Datasheet download datasheet SYS82000RKXC-70 Datasheet

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Other Datasheets by MOSAIC

Part Number Description
SYS82000RKXC-10 2M x 8 SRAM MODULE
SYS82000RKXC-12 2M x 8 SRAM MODULE
SYS82000RKXC-85 2M x 8 SRAM MODULE
SYS84000RKX-10 4M x 8 SRAM MODULE
SYS84000RKX-12 4M x 8 SRAM MODULE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com 2M x 8 SRAM MODULE SYS82000RKXC - 70/85/10/12 Issue 1.3 : April 2001 Description The SYS82000RKXC is a plastic 16Mbit Static RAM Module housed in a standard 38 pin Single InLine package organised as 2M x 8 with access times of 85,100, or 120 ns. The module is constructed using four 512Kx8 SRAMs in TSOPII packages mounted onto an FR4 epoxy substrate. This offers an extremely high PCB packing density. The device is offered in standard and low power versions, with the -L module having a low voltage data retention mode for battery backed applications. • • Features Access Times of 85/100/120 ns. Low Power Disapation: Operating 600 mW (Max.) Standby-L Version 1.1 mW (Max.) 5 Volt Supply ± 10%. Completely Static Operation. Low Voltage VCC Data Retention.