• Part: MT8205
  • Description: N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: MOS-TECH
  • Size: 251.79 KB
Download MT8205 Datasheet PDF
MOS-TECH
MT8205
FEATURES - Super high dense cell design for low RDS(ON) - Rugged and reliable - Simple drive requirement - TSOP6 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 20V 4A 21@ VGS=4.5V 35@ VGS=2.5V NOTE:The MT8205 is available in a lead-free package ABSOLUTE MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ Symbol VDS VGS ID Limit 20 ±12 - Pulse d b IDM 20 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG 1.7 1.25 -55 to 150 Unit ℃ THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA 80 ℃/W ©2005 Mos-Tech Semiconductor 1 http//.mtsemi. 茂钿半導體股份有限公司 Mos-Tech Semiconductor Co.,LTD. ELECTRICAL...