MT3108
Features
- RDS(on) = mΩ ( Typ.) @ VGS = 10V, ID = 5A
- Fast switching speed
- Low gate charge
- High performance trench technology for extremely low RDS(on)
- High power and current handling capability
- Ro HS pliant
Application
- DC to DC convertors / Synchronous Rectification
General Description
This N-Channel MOSFET is producedusing PRVWHFK Vemiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
G DS
TO-220
MOSFET Maximum Ratings TC = 25o C unless otherwise noted-
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
100 V
VGSS ID IDM EAS IAR EAR
Gate to Source Voltage
±20 V
Drain Current Drain Current
-Continuous (TC = 85o C)5A
- Pulsed
(Note...
