Datasheet4U Logo Datasheet4U.com

MSC4963W - Dual P-Channel Enhancement Mode Power MOS FET

Key Features

  • VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ VGS=-2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Lead Free.

📥 Download Datasheet

Datasheet Details

Part number MSC4963W
Manufacturer MORESEMI
File Size 584.19 KB
Description Dual P-Channel Enhancement Mode Power MOS FET
Datasheet download datasheet MSC4963W Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MSC49N02X 40V N-Channel MOSFETs Bruckewell
MSC49N60X 40V N-Channel MOSFETs Bruckewell
MSC4000 RF AND MICROWAVE TRANSISTORS Advanced Power Technology
MSC4001 RF AND MICROWAVE TRANSISTORS Advanced Power Technology
MSC4003 RF AND MICROWAVE TRANSISTORS Advanced Power Technology

Other Datasheets by MORESEMI

Part Number Description
MSC4953W Dual P-Channel MOSFET
MSC4606W P & N-Channel Power MOSFET
MSC0203S N/P-Channel Power MOSFET
MSC0205W Dual N-Channel MOSFET
MSC0206SE Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MSC4963W -20V(D-S) Dual P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ VGS=-2.