MCL4448
Features
- Silicon epitaxial planar diode
- Fast Switching diodes
- 500m W power dissipation
- This diode is also available in the DO-35 case with the type
500m W 100 Volt designation 1N4448, in the Minimelf case with the type designation Silicon Epitaxial Diode
DL4448
- Lead Free Finish/Rohs pliant (Note1) ("P"Suffix designates pliant. See ordering information)
Maximum Ratings
- Operating Temperature: -55OC to +150 OC
- Storage Temperature: -55OC to +150OC
- Maximum Thermal Resistance; 350K/W Junction To Ambient
- Epoxy meets UL 94 V-0 flammability rating
E- lect Mriociasltu Crhea Sreancstietirviistyti Lcesv@el
25OC
Unless
Otherwise
Specified
Reverse Voltage
Peak Reverse Voltage
75V
100V
Average Rectified Current
Power Dissipation
PTOT
Junction Temperature
Surge Forward Current
IFSM
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC...
