MY50N06D - 60V N-Channel Enhancement Mode MOSFET

General Description

The MY50N06D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Battery protection Load switch Uninterr

Key Features

VDSS 60 V ID 50 A RDS(ON)(atVGS =10V).

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MY50N06D 60v n-channel enhancement mode mosfet by MAOYUAN - Datasheet Preview

Datasheet Details

Part number	MY50N06D
Manufacturer	MAOYUAN
File Size	2.40 MB
Description	60V N-Channel Enhancement Mode MOSFET
Datasheet	MY50N06D Datasheet

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MY50N06D 60V N-Channel Enhancement Mode MOSFET General Description The MY50N06D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Application  Battery protection  Load switch  Uninterruptible power supply Features VDSS 60 V ID 50 A RDS(ON)(atVGS =10V) <13 mΩ RDS(ON)(atVGS =4.