• Part: MY50N06D
  • Description: 60V N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: MAOYUAN
  • Size: 2.40 MB
Download MY50N06D Datasheet PDF
MAOYUAN
MY50N06D
Description The MY50N06D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Application - Battery protection - Load switch - Uninterruptible power supply Features VDSS RDS(ON)(at VGS =10V) <13 mΩ RDS(ON)(at VGS =4.5V) <15 mΩ Package Marking and Ordering Information Product ID Pack TO-252-2L Marking MY50N06D Absolute Maximum Ratings ( TC= 2 5 ℃ unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ RθJA RθJA Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power...