MY12N10D
Description
The MY12N10D use advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Features
VDSS
RDS(ON)(at VGS =10V) <140 mΩ
RDS(ON)(at VGS =4.5V) <180 mΩ
Application
- Uninterruptible power supply
- Power switching application
- Hard switched
- high frequency circuits
Package Marking and Ordering Information
Product ID
Pack
TO-252-2L
Marking MY12N10D
Absolute Maximum Ratings ( TC= 2 5 ℃ unless otherwise noted)
Parameter Drain source voltage Gate source voltage Continuous drain current1), TC=25 ℃ Pulsed drain current2), TC=25 ℃ Power dissipation3), TC=25 ℃ Single pulsed avalanche energy5) Operation and storage temperature Thermal resistance, junction-case Thermal resistance, junction-ambient4)
Symbol VDS VGS ID
ID, pulse PD EAS
Tstg，Tj RθJC RθJA
Qty(PCS) 2500
Value 100 ±20 12 24 17 1.2
-55 to 150 7.4 62
Unit V V A A W m J ℃
℃/W...
