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WGC22630 - Thermally Enhanced GaN Amplifier

General Description

The WGC22630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use in multistandard cellular power amplifier applications.

Key Features

  • GaN on SiC HEMT Technology.
  • Pulsed CW Performance: 2155 MHz, 48 V, 40 µs Pulse Width, 10% Duty Cycle, Combined Outputs.
  • Output Power @ P4dB = 630 W.
  • Efficiency @ P4dB = 68%.
  • RoHS.
  • Compliant.

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Other Datasheets by MACOM Technology Solutions

Part Number Description
WGC20630V1A Thermally Enhanced GaN Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Thermally Enhanced GaN Amplifier 630 W, 48 V, 2110 - 2200 MHz Features • GaN on SiC HEMT Technology • Pulsed CW Performance: 2155 MHz, 48 V, 40 µs Pulse Width, 10% Duty Cycle, Combined Outputs • Output Power @ P4dB = 630 W • Efficiency @ P4dB = 68% • RoHS* Compliant Applications • Cellular Power Description The WGC22630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use in multistandard cellular power amplifier applications. It features optimized operation from 2110 - 2200 MHz and a thermally-enhanced over-molded plastic package. Typical RF Performance1 WCDMA 3GPP TM1 64 DPCH 10dB PAR @ 0.01% CCDF, VDS = 48 V, IDQCAR = 360 mA, VGSPK = -4.7 V, POUT = 49.3 dBm (85 W), TA = +25°C. Frequency (MHz) Gain Efficiency OPAR (dB) (%) (dB) ACPR (dBc) 2110 16.5 58.0 8.