PXAD184218FV Datasheet PDF - MACOM 420W High Power RF LDMOS FET Specs

PXAD184218FV - 420W High Power RF LDMOS FET

Datasheet Summary

Description

The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.

Features

include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with an advanded LDMOS process, this device provides excellent thermal performance and superior reliability. PXAD184218FV Package H-37275G-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ(MAIN) = 720 mA, VGS(PEAK) = 1.4 V, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 Efficiency 20 40 16 20 1.

Datasheet Details

Part number	PXAD184218FV
Manufacturer	MACOM
File Size	381.26 KB
Description	420W High Power RF LDMOS FET
Datasheet	PXAD184218FV Datasheet
Additional preview pages of the PXAD184218FV datasheet.

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Full PDF Text Transcription

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PXAD184218FV Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 – 1880 MHz Description The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with an advanded LDMOS process, this device provides excellent thermal performance and superior reliability. PXAD184218FV Package H-37275G-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ(MAIN) = 720 mA, VGS(PEAK) = 1.4 V, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.

Published: May 9, 2024 |