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PTRA097058NB
Thermally-Enhanced High Power RF LDMOS FET 800 W, 48 V, 730 – 960 MHz
Description
The PTRA097058NB is a 800-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 730 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTRA097058NB Package PG-HB2SOF-6-1
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 450 mA, VGS(PEAK) = 1.9 V,
ƒ = 960 MHz, 3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
28
70
Efficiency
24
50
20
30
16
Gain
10
12
-10
8
-30
PAR @ 0.
PTRA097058NB Datasheet
