Datasheet4U Logo Datasheet4U.com

MA4GP907 - GaAs Flip Chip PIN

General Description

The MA4GP907 is a Gallium Arsenide (GaAs) flip-chip PIN diode.

It is fabricated with MOCVD grown epitaxy using a process and design that optimizes device-to-device uniformity and produces extremely low parasitics.

Key Features

  • Low Series Resistance.
  • Ultra Low Capacitance.
  • Millimeter Wave Switching & Cutoff Frequency.
  • 2 ns Switching Speed.
  • Can be Driven by a Buffered TTL.
  • Silicon Nitride Passivation.
  • Polyimide Scratch Protection.
  • RoHS.
  • Compliant.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MA4GP907 GaAs Flip Chip PIN Features  Low Series Resistance  Ultra Low Capacitance  Millimeter Wave Switching & Cutoff Frequency  2 ns Switching Speed  Can be Driven by a Buffered TTL  Silicon Nitride Passivation  Polyimide Scratch Protection  RoHS* Compliant Description The MA4GP907 is a Gallium Arsenide (GaAs) flip-chip PIN diode. It is fabricated with MOCVD grown epitaxy using a process and design that optimizes device-to-device uniformity and produces extremely low parasitics. The diode exhibits an exceptionally low RC product (0.1 ps) and a 2 - 3 ns switching speed. The chips are fully passivated with silicon nitride and have an added BCB polymer layer for scratch protection.