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PH2856-160 - Radar Pulsed Power Transistor

Download the PH2856-160 datasheet PDF (PH2856-160-MA included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for radar pulsed power transistor.

Features

  • NPN silicon microwave power transistors.
  • Common base configuration.
  • Broadband Class C operation.
  • High efficiency inter-digitized geometry.
  • Diffused emitter ballasting resistors.
  • Gold metallization system.
  • Internal input and output impedance matching.
  • Hermetic metal/ceramic package.
  • RoHS compliant Outline Drawing Rev. V1 Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipa.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PH2856-160-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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PH2856-160 Radar Pulsed Power Transistor 160W, 2.856 GHz, 12µs Pulse, 10% Duty Features  NPN silicon microwave power transistors  Common base configuration  Broadband Class C operation  High efficiency inter-digitized geometry  Diffused emitter ballasting resistors  Gold metallization system  Internal input and output impedance matching  Hermetic metal/ceramic package  RoHS compliant Outline Drawing Rev. V1 Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 65 3.0 15.
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