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NPTB00004B - GaN Power Transistor

This page provides the datasheet information for the NPTB00004B, a member of the NPTB00004B-MA GaN Power Transistor family.

Datasheet Summary

Description

The NPTB00004B GaN HEMT is a power transistor optimized for DC - 6 GHz operation.

This device supports CW, pulsed, and linear operation with output power levels to 5 W (37 dBm) in an industry standard surface mount plastic package.

Features

  • GaN on Si HEMT D-Mode Transistor.
  • Suitable for linear and saturated.

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Datasheet preview – NPTB00004B

Datasheet Details

Part number NPTB00004B
Manufacturer MA-COM
File Size 2.17 MB
Description GaN Power Transistor
Datasheet download datasheet NPTB00004B Datasheet
Additional preview pages of the NPTB00004B datasheet.

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Full PDF Text Transcription

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GaN Power Transistor, 28 V, 5 W DC - 6 GHz Features • GaN on Si HEMT D-Mode Transistor • Suitable for linear and saturated applications • Tunable from DC - 6 GHz • 28 V Operation • 14.8 dB Gain @ 2.5 GHz • 57 % Drain Efficiency @ 2.5 GHz • 100 % RF Tested • Industry standard SOIC plastic package • RoHS* Compliant Applications • Defense Communications • Land Mobile Radio • Avionics • Wireless Infrastructure • ISM • VHF/UHF/L/S-Band Radar Description The NPTB00004B GaN HEMT is a power transistor optimized for DC - 6 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 5 W (37 dBm) in an industry standard surface mount plastic package.
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