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MA4AGBL912 - AlGaAs Beamlead PIN Diode

Download the MA4AGBL912 datasheet PDF. This datasheet also covers the MA4AGBL912-MA variant, as both devices belong to the same algaas beamlead pin diode family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MA4AGBL912-MA-COM.pdf) that lists specifications for multiple related part numbers.

General Description

M/A-COM Technology Solutions MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode.

AlGaAs anodes, which utilize M/A-COM Tech’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices.

This device is fabricated in a OMCVD system using a process optimized for high device uniformity and extremely low parasitics.

Overview

MA4AGBL912 AlGaAs Beamlead PIN Diode.

Key Features

  •  Low Series Resistance  Low Capacitance  5 Nanosecond Switching Speed  Can be Driven by a Buffered +5V TTL  Silicon Nitride Passivation  Polyimide Scratch Protection  RoHS Compliant.