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MP4TD1100 - Silicon Bipolar MMIC Cascadable Amplifier

Download the MP4TD1100 datasheet PDF. This datasheet also covers the MP4TD1100_M variant, as both devices belong to the same silicon bipolar mmic cascadable amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

M-Pulse's MP4TD1100 is a high performance silicon bipolar MMIC chip.

The MP4TD1100 is designed for use in 50Ω or 75Ω systems where a high dynamic range gain block is required.

Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications.

Key Features

  • High Dynamic Range Cascadable 50Ω/75Ω Gain Block.
  • 3dB Bandwidth: 50 MHz to 1.0 GHz.
  • 17.5 dBm Typical P1dB @ 0.7 Ghz.
  • 11 dB Typical Gain @ 0.5 GHz.
  • 3.5 dB Typical Noise Figure @ 1.0 GHz RF Input MP4TD1100 Chip Outline Drawing1,2,3,4.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MP4TD1100_M-pulseMicrowave.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MP4TD1100
Manufacturer M-pulse Microwave
File Size 172.34 KB
Description Silicon Bipolar MMIC Cascadable Amplifier
Datasheet download datasheet MP4TD1100 Datasheet

Full PDF Text Transcription for MP4TD1100 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MP4TD1100. For precise diagrams, and layout, please refer to the original PDF.

M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • High Dynamic Range Cascadable 50Ω/75Ω Gain Block • 3dB Bandwidth: 50 MHz to 1.0 GHz • 17.5 dBm Typi...

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50Ω/75Ω Gain Block • 3dB Bandwidth: 50 MHz to 1.0 GHz • 17.5 dBm Typical P1dB @ 0.7 Ghz • 11 dB Typical Gain @ 0.5 GHz • 3.5 dB Typical Noise Figure @ 1.0 GHz RF Input MP4TD1100 Chip Outline Drawing1,2,3,4 Description M-Pulse's MP4TD1100 is a high performance silicon bipolar MMIC chip. The MP4TD1100 is designed for use in 50Ω or 75Ω systems where a high dynamic range gain block is required. Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications. The MP4TD1100 is fabricated using a 10 GHz f T silicon bipolar technology that features gold metalization and IC passivatio