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1N5645A - Silicon Avalanche Diodes

Key Features

  • Hermetically sealed.
  • Breakdown voltage range 6.8 - 200 volts.
  • Glass passivated junction.
  • Excellent clamping capability.
  • Low zener impedance.
  • 100% surge tested.
  • -55°C to +150°C.
  • Uni-polar ® 6.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N56 Series FEATURES • Hermetically sealed • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability • Low zener impedance •100% surge tested •-55°C to +150°C •Uni-polar ® 6 SILICON DIODE ARRAYS Min 31.8 Max 5.33 7.5 9.0 Min 25.4 Max 0.8 5.58 MAXIMUM RATING •Peak Pulse Power (Ppk): 1500 Watts (10 x 1000µs)@25°C (see diagram on page 3 for wave form) •1 watt steady state •Response time: 1 x 10-12 seconds (theoretical) •Operating & storage temperature: -55°C to +150°C MECHANICAL CHARACTERISTICS •Case: Metal hermetically sealed DO-13 package •Terminals: Axial leads, solderable per MIL-STD-202 Method 208 •Solderable leads = 230°C for 10 seconds (1.