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LTE-4206 - GaAlAs T-1 Standard 3 Infrared Emitting Diode

Product Overview

Lite-On Technology

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LTE-4206 GaAlAs T-1 Standard 3 Infrared Emitting Diode by Lite-On Technology - Datasheet Preview — Datasheet preview – LTE-4206

Datasheet Details

Part number	LTE-4206
Manufacturer	LITEON Technology
File Size	297.61 KB
Description	GaAlAs T-1 Standard 3 Infrared Emitting Diode
Datasheet	LTE-4206 Datasheet
Note	This datasheet PDF includes multiple part numbers: LTE-4206, LTE-4206_Lite. Please refer to the document for exact specifications by model.
Additional preview pages of the LTE-4206 datasheet.

Product details

Description

The LTE-4206 series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages.

Features

Selected to specific on-line intensity and radiant intensity ranges. Low cost plastic end looking package. Mechanically and spectrally matched to the LTR-4206 series of phototransistor. The LTE-4206 series are made with Gallium Aluminum Arsenide window layer on Gallium Arsenide infrared emitting diodes. Package Dimensions.

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Other Datasheets by Lite-On Technology

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Published: Feb 17, 2011 |