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LESHAN RADIO COMPANY, LTD.
Silicon Pin Diode
This device is designd primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits.Supplied in a surface Mount package. • Rugged Pin Structure Coupled with Wirebond Construction
for Optimum Reliability • Low Capacitance—0.7pF Typ at VR=20Vdc • Very Low Series Resistance at 100MHz—0.34Ohms(Typ)@IF=10mAdc
MMBV3401LT1
SILICON PIN SWITCHING DIODE
3
3 CATHODE
1 ANODE
1 2
CASE 318–08, STYLE 6 SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Symbol
Value
Reverse Voltage Forward power Dissipation @T A = 25°C Derate above 25°C
VR PD
20 200 2.
MMBV3401LT1 Datasheet
