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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
www.datasheet4u.com
PNP Silicon
3 COLLECTOR
LBCW69LT1G LBCW70LT1G
3
1 BASE
Featrues
We declare that the material of product compliance with RoHS requirements.
2 EMITTER
1 2
MAXIMUM RATINGS
CASE 318–08, STYLE 6
Rating Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous
Symbol V CEO V
EBO
Value – 45 – 5.0 – 100
Unit Vdc Vdc mAdc
SOT–23 (TO–236AB)
IC
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.
LBCW69LT1G Datasheet
