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Switching diode
• Applications High speed switching
• Features 1) Extremely small surface mounting type. 2) High Speed. 3) High reliability.
•Construction Silicon epitaxial planar
LESHAN RADIO COMPANY, LTD.
L1SS400T1
1 2
SOD - 523
1 CATHODE
2 ANODE
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Peak reverse voltage
VRM
DC reverse voltage
VR
Peak forward current
I FM
Mean rectifying current
IO
Surge current (1s)
I surge
Junction temperature
Tj
Storage temperature
Tstg
Limits 90 80 225 100 500 125
– 55 ~ +125
Unit V V mA mA mA °C °C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Min.
Forward voltage
VF –
Reverse current
IR –
Capacitance between terminals CT
–
Reverse recovery time
trr –
Typ. – –
0.72 –
Max. 1.2 0.1 3.