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LDTDG12GPT3G - Bias Resistor Transistor

Download the LDTDG12GPT3G datasheet PDF. This datasheet also covers the LDTDG12GPT1G variant, as both devices belong to the same bias resistor transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • 1) High hFE. 300 (Min. ) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
  • We declare that the material of product compliance with RoHS requirements. zStructure NPN epitaxial planar silicon transistor (with built-in resistor and zener diode) zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LDTDG12GPT1G-LRC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LDTDG12GPT3G
Manufacturer LRC
File Size 289.18 KB
Description Bias Resistor Transistor
Datasheet download datasheet LDTDG12GPT3G Datasheet

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Other Datasheets by LRC

Part Number Description
LDTDG12GPT1G Bias Resistor Transistor
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Full PDF Text Transcription

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPT1G zApplications Driver zFeatures 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load). • We declare that the material of product compliance with RoHS requirements.
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