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LDTBG12GPT3G - Bias Resistor Transistor

Download the LDTBG12GPT3G datasheet PDF. This datasheet also covers the LDTBG12GPT1G variant, as both devices belong to the same bias resistor transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • 1) High hFE. 300 (Min. ) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
  • We declare that the material of product compliance with RoHS requirements. zStructure NPN epitaxial planar silicon transistor (with built-in resistor and zener diode) zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LDTBG12GPT1G-LRC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LDTBG12GPT3G
Manufacturer LRC
File Size 368.41 KB
Description Bias Resistor Transistor
Datasheet download datasheet LDTBG12GPT3G Datasheet

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Other Datasheets by LRC

Part Number Description
LDTBG12GPT1G Bias Resistor Transistor
LDTBG12GPWT1G Bias Resistor Transistor
LDTBG12GPWT3G Bias Resistor Transistor
LDTB113EET1G Bias Resistor Transistor
LDTB113EET3G Bias Resistor Transistor

Full PDF Text Transcription

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPT1G zApplications Driver zFeatures 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load). • We declare that the material of product compliance with RoHS requirements.
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