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LESHAN RADIO COMPANY, LTD.
TO-92 Plastic-Encapsulate Transistors
L8550
FEATURES Power dissipation PCM : 1 A
3. COLLECTOR
TRANSISTOR˄ PNP
˅
TO
ü 92
W
˄Tamb=25ć˅
1.EMITTER
Collector current ICM: -1.5 Collector-base voltage
2. BASE
V(BR)CBO :- 40 V Operating and storage junction temperature range TJ ˈT stg: -55ć to +150ć ELECTRICAL CHARACTERISTICS
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current
1 2 3
˄ Tamb=25ć
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE˄1˅
unless
Test
otherwise
MIN -40 -25 -5
specified
TYP
˅
MAX UNIT V V V -0.1 -0.1 -0.1 A A A
conditions IE=0 IB=0 IC=0 IE=0 IE=0 IC=0
Ic= -100 A ˈ IC= -0.
L8550 Datasheet
