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L8050 - TO-92 Plastic-Encapsulate Transistors

Features

  • Power dissipation PCM : 1 W ˄Tamb=25ć˅ Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJˈTstg: -55ć to +150ć ˄ ć.

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Datasheet Details

Part number L8050
Manufacturer LRC
File Size 197.68 KB
Description TO-92 Plastic-Encapsulate Transistors
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Full PDF Text Transcription

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LESHAN RADIO COMPANY, LTD. TO-92 Plastic-Encapsulate Transistors L8050 TRANSISTOR˄ NPN˅ FEATURES Power dissipation PCM : 1 W ˄Tamb=25ć˅ Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJˈTstg: -55ć to +150ć ˄ ćELECTRICAL CHARACTERISTICS Tamb=25 unless üTO 92 1.EMITTER 2.BASE 3. COLLECTOR 123 ˅otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100 ­A ˈ IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1 mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100 ­Aˈ IC=0 5 V Collector cut-off current ICBO VCB= 40 V , IE=0 0.1 ­A Collector cut-off current ICEO VCE= 20 V , IB=0 0.
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