LZP60N06 - N-Channel Transistor

This page provides the datasheet information for the LZP60N06, a member of the LZP60N06-LITE N-Channel Transistor family.

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
High di/dt Capability.
Improved Gate Charge.
Wide Expanded Safe Operating Area.

LITE-ON

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Datasheet Details

Part number	LZP60N06
Manufacturer	LITEON
File Size	792.03 KB
Description	N-Channel Transistor
Datasheet	LZP60N06 Datasheet
Additional preview pages of the LZP60N06 datasheet.

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Full PDF Text Transcription

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LITE ON LITE-ON SEMICONDUCTOR LZP60N06 Features • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate Charge • Wide Expanded Safe Operating Area Application • DC-DC Converters • UPS & Monitors • High Power Swtching D G S GDS TO-220 BVDSS = 60V RDS(on) = 0.016Ω Typ = 0.

Published: Feb 17, 2015 |