MDG3S06C065 - 6A 650V SiC Schottky Diode

Key Features

s.
No Reverse Recovery/ No Forward Recovery.
Temperature Independent Switching Behavior.
Positive Temperature Coefficient on VF.
Fast Reverse Recovery.
High Surge Current Capability.
100% UIS and RG Tested MDG3S06C065 6A 650V SiC Schottky Diode.
Product Summary VRRM IF@Tc=150℃ VF ,TYP@Tc=25℃ VF ,TYP@Tc=175℃ 650 V 6 A 1.35 V 1.7 V Qc 18 nC.
Benefits.
Higher System Efficiency.
System Cost and Size Sav.

MDG3S06C065 6a 650v sic schottky diode by LIPTAI - Datasheet Preview

Datasheet Details

Part number	MDG3S06C065
Manufacturer	LIPTAI
File Size	239.53 KB
Description	6A 650V SiC Schottky Diode
Datasheet	MDG3S06C065 Datasheet

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Full PDF Text Transcription (Reference)

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LIPTAI ■ Applications • Switch Mode Power Supply • Power Factor Correction • Solar Inverter • Uninterruptible Power Supply ■ Features • No Reverse Recovery/ No Forward Recovery • Temperature Independent Switching Behavior • Positive Temperature Coefficient on VF • Fast Reverse Recovery • High Surge Current Capability • 100% UIS and RG Tested MDG3S06C065 6A 650V SiC Schottky Diode ■ Product Summary VRRM IF@Tc=150℃ VF ,TYP@Tc=25℃ VF ,TYP@Tc=175℃ 650 V 6 A 1.35 V 1.7 V Qc 18 nC ■ Benefits • Higher System Efficiency • System Cost and Size Savings • High Frequency Operation • Higher System Reliability • Reduced EMI A C DFN5x6 Cathde ：5-8 Anode ：1-3 N.C.：4 Marking MDG3S06C065 Package DFN5x6 Packaging Tape & Reel Min. package quantity 5000 Si Chuan LIPTAI Electronic Co.