MDG3S06C065
Features
- No Reverse Recovery/ No Forward Recovery
- Temperature Independent Switching Behavior
- Positive Temperature Coefficient on VF
- Fast Reverse Recovery
- High Surge Current Capability
- 100% UIS and RG Tested
6A 650V Si C Schottky Diode
- Product Summary
VRRM IF@Tc=150℃ VF ,TYP@Tc=25℃ VF ,TYP@Tc=175℃
Qc
18 n C
- Benefits
- Higher System Efficiency
- System Cost and Size Savings
- High Frequency Operation
- Higher System Reliability
- Reduced EMI
DFN5x6
Cathde ：5-8 Anode ：1-3 N.C.：4
Marking MDG3S06C065
Package DFN5x6
Packaging Tape & Reel
Min. package quantity 5000
Si Chuan LIPTAI Electronic Co.,Ltd MC-Power Semiconductor Co.,Ltd
.mcpower-semi.
2021.10 Rev.1.0
LIPTAI
- Absolute Maximum Ratings（Tc=25℃ unless otherwise noted)
Parameter
Symbol
Ratings
Peak Repetitive Reverse Voltage Surge Peak Reverse Voltage DC Peak Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge...
