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LSK170D - Single N-Channel JFET

Download the LSK170D datasheet PDF. This datasheet also covers the LSK170 variant, as both devices belong to the same single n-channel jfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The LSK170 is specifically designed for low noise, high input The device is available in a surface mount SOT-23 package, throughimpedance applications within the audio, instrumentation, medical hole TO-92 package and SOT-89 package.

The surface mount and sensors markets.

Key Features

  • ULTRA LOW NOISE (f =1khz): en = 0.9nV/√Hz.
  • High Breakdown Voltage: BVGSS = 40V min.
  • High Gain: Gfs = 22mS (typ).
  • High Input Impedance: 20GΩ typ.
  • Low Capacitance: 22pF max.
  • Improved Second Source Replacement for 2SK170.
  • For Equivalent Monolithic-Dual, See the LSK389 Series Benefits.
  • Direct Pin-For-Pin Replacement of Toshiba's 2SK170.
  • Optimized to Provide Low Noise at Both High and Low Frequencies With a Narrow Range of IDSS and Low Capacitance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LSK170-LINEARSYSTEMS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LSK170D
Manufacturer LINEAR SYSTEMS
File Size 1.14 MB
Description Single N-Channel JFET
Datasheet download datasheet LSK170D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LSK170 A/B/C/D Quality Through Innovation Since 1987 High Input Impedance, Ultra-Low Noise, Single N-Channel JFET Ultra-Low Noise at Both High & Low Frequencies With a Narrow Range of IDSS Absolute Maximum Ratings @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation @ +25°C Maximum Currents Gate Forward Current Maximum Voltages Gate to Source Gate to Drain -55 to +150°C -55 to +135°C 400mW IG(F) = 10mA VGSS = 40V VGDS = 40V TO-92 3L TOP VIEW 1 2 3 D G S SOT-23 3L TOP VIEW G 3 1 2 D S SOT-89 3L TOP VIEW G 1 2 3 SGD Features  ULTRA LOW NOISE (f =1khz): en = 0.