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FEATURES
LOW DRIFT
IΔVGS1-2/ΔT│=5µV/°C max.
LOW LEAKAGE
IG=20pA TYP.
LOW NOISE
en=10Nv/√Hz TYP.
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
-55 to +150°C
Operating Junction Temperature
-55 to +150°C
Maximum Voltage and Current for Each Transistor1
-VGSS Gate Voltage to Drain or Source 60V
-IG(f) Gate Forward Current
50mV
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
400mW @ 25ºC2
LS3954A LS3954 LS3955 LS3956 LS3958
LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL
JFET AMPLIFIER
Top View TO-71 & TO-78
Top View SOIC
ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise noted)
SYMBOL
CHARACTERISTIC LS3954A LS3954 LS3955 LS3956 LS3958 UNITS
│∆VGS1-2/∆T│max. Drift vs.