Datasheet4U Logo Datasheet4U.com

LS350 - MONOLITHIC DUAL PNP TRANSISTOR

Key Features

  • HIGH GAIN TIGHT VBE.

📥 Download Datasheet

Datasheet Details

Part number LS350
Manufacturer LINEAR SYSTEMS
File Size 170.53 KB
Description MONOLITHIC DUAL PNP TRANSISTOR
Datasheet download datasheet LS350 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FEATURES HIGH GAIN TIGHT VBE MATCHING hFE 200 @ 10µA - 1mA IVBE1-VBE2I=0.2mV TYP. HIGH fT 275 MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C (unless otherwise stated) IC Collector Current 10mA Maximum Temperatures Storage Temperature -55° to +150°C Operating Junction Temperature +150°C Maximum Power Dissipation ONE SIDE BOTH SIDES Device Dissipation @ Free Air 250mW 500mW Linear Derating Factor 2.3mW/°C 4.