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FEATURES
HIGH GAIN TIGHT VBE MATCHING
hFE 200 @ 10µA - 1mA IVBE1-VBE2I=0.2mV TYP.
HIGH fT
275 MHz TYP. @ 1mA
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25 °C (unless otherwise stated)
IC
Collector Current
10mA
Maximum Temperatures
Storage Temperature
-55° to +150°C
Operating Junction Temperature +150°C
Maximum Power Dissipation ONE SIDE BOTH SIDES
Device Dissipation @ Free Air 250mW
500mW
Linear Derating Factor
2.3mW/°C 4.