BAV70T
Features
Fast Switching Speed For General Purpose Switching Applications High Conductance
Dimensions in inches and (millimeters)
BAW56T Marking: JD BAV70T Marking: JJ
BAV99T Marking: JE
Maximum Ratings @TA=25℃
Parameter Reverse voltage Forward current Forward power dissipation Junction temperature Storage temperature
Symbol VR IO PD Tj Tstg
Limits 85 75 150 150
-65~150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Reverse breakdown voltage
V(BR)
IR= 1μA
Reverse voltage leakage current
Forward voltage Diode capacitance Reverse recovery time
IR1 VR=75V
IR2 VR=25V
IF=1m A
IF=10m A IF=50m A
IF=150m A
CD VR=0 f=1MHz t rr
IF=IR=10m A Irr=0.1×IR,RL=100Ω
MIN 85
Unit V m A m W ℃ ℃
2 0.03 715 855 1000 1250 1.5
UNIT V μA μA m V p F n S http://.luguang.cn mail:lge@luguang.cn
Typical Characteristics
BAW56T/BAV70T/BAV99T
Switching Diode http://.luguang.cn mail:lge@luguang.cn...
