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2SB649 - PNP Transistor

Key Features

  • 3 2 1 3. BASE Low frequency power amplifier complementary pair with 2SD669/A.

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Datasheet Details

Part number 2SB649
Manufacturer LGE
File Size 199.20 KB
Description PNP Transistor
Datasheet download datasheet 2SB649 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB649/2SB649A(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 7.400 7.800 2.500 1.100 2.900 1.500 Features 3 2 1 3. BASE Low frequency power amplifier complementary pair with 2SD669/A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage 2SB649 -120 V 2SB649A -160 VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless 3.000 3.200 10.60 0 11.00 0 15.30 0 15.70 0 3.900 4.100 2.100 2.300 1.170 1.370 0.000 0.300 0.660 0.860 2.290 TYP 4.480 4.680 0.450 0.